Product Summary
The IRF7379PBF is an international rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
Parametrics
IRF7379PBF absolute maximum ratings: (1)VSD,Drain-to-source voltage: -30A; (2)ID@TA=25°C, continuous drain current, VGS@10V: -4.3A; (3)ID@TA=70°C, continuous drain current, VGS@10V: -3.4A; (4)IDM, Pulsed drain current: -34A; (5)PD@TA=25°C, power dissipation: 2.5W; Linear derating factor: 0.02W; (6)VGS, Gate-to-source voltage: ±20V; (7)dv/dt, peak diode recovery dv/dt: -5.0V/ns; (8)TJ, TSTG, Junction and storage temperature range: -55 to +150°C.
Features
IRF7379PBF features: (1)Generation V technology; (2)Ultra low on-resistance; (3)Complimentary half bridge; (4)Surface mount; (5)Fully avalanche rated; (6)Lead-free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF7379PBF |
International Rectifier |
MOSFET |
Data Sheet |
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