Product Summary

The QM75DY-H is a MITSUBISHI transistor module, which is designed for high power switching.

Parametrics

QM75DY-H Absolute maximum ratings: (1)Collector-emitter voltage: 600 V; (2)Collector-emitter voltage: 600 V; (3)Collector-base voltage: 600 V; (4)QM75DY-H Emitter-base voltage: 7 V; (5)Collector current: 75 A; (6)Collector reverse current: 75 A; (7)Collector dissipation: 350 W; (8)Base current: 4.5 A; (9)QM75DY-H Surge collector reverse current: 750 A; (10)Junction temperature: -40 to +150℃; (11)Storage temperature: -40 to +125℃.

Features

QM75DY-H Features: (1)IC Collector current: 75A; (2)QM75DY-H VCEX Collector-emitter voltage: 600V; (3)hFE DC current gain: 75; (4)QM75DY-H Insulated Type; (5)UL Recognized: Yellow Card No. E80276 (N)QM75DY-H File No. E80271.

Diagrams

<P><IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201262953927478.jpg"></P>

Image Part No Mfg Description Data Sheet Download Pricing
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QM75DY-H
QM75DY-H

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Data Sheet

Negotiable 
QM75DY-HB
QM75DY-HB

Other


Data Sheet

Negotiable