Product Summary

The IRF7379PBF is an international rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.

Parametrics

IRF7379PBF absolute maximum ratings: (1)VSD,Drain-to-source voltage: -30A; (2)ID@TA=25°C, continuous drain current, VGS@10V: -4.3A; (3)ID@TA=70°C, continuous drain current, VGS@10V: -3.4A; (4)IDM, Pulsed drain current: -34A; (5)PD@TA=25°C, power dissipation: 2.5W; Linear derating factor: 0.02W; (6)VGS, Gate-to-source voltage: ±20V; (7)dv/dt, peak diode recovery dv/dt: -5.0V/ns; (8)TJ, TSTG, Junction and storage temperature range: -55 to +150°C.

Features

IRF7379PBF features: (1)Generation V technology; (2)Ultra low on-resistance; (3)Complimentary half bridge; (4)Surface mount; (5)Fully avalanche rated; (6)Lead-free.

Diagrams

IRF7379PBF diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7379PBF
IRF7379PBF
International Rectifier
MOSFET
Data Sheet
0-1: $0.84
1-25: $0.52
25-100: $0.35
100-250: $0.30
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF710
IRF710
Vishay/Siliconix
MOSFET N-Chan 400V 2.0 Amp
Data Sheet
0-730: $0.79
730-1000: $0.76
1000-2000: $0.74
2000-5000: $0.73
IRF710, SiHF710
IRF710, SiHF710
Other

Data Sheet
Negotiable 
IRF710_R4943
IRF710_R4943
Fairchild Semiconductor
MOSFET TO-220AB
Data Sheet
Negotiable 
IRF7101
IRF7101
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-570: $0.45
IRF7101PBF
IRF7101PBF
International Rectifier
MOSFET
Data Sheet
0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
IRF7101TR
IRF7101TR
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-4000: $0.41