(China (Mainland))
Product Summary
FZ1200R16KF4 The FZ1200R16KF4 is from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
FZ1200R16KF4 Absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 50 A; (2)Continuous Drain Current, VGS @ 10V: 35 A; (3)Pulsed Drain Current: 200 A; (4)Power Dissipation: 300 W; (5)Linear Derating Factor: 2.0 W/鈩? (6)Gate-to-Source Voltage: 卤20 V; (7)Single Pulse Avalanche Energy: 560 mJ; (8)Avalanche Current: 50 A; (9)Repetitive Avalanche Energy: 30 mJ; (10)Peak Diode Recovery dv/dt: 10 V/ns; (11)Operating Junction and Storage Temperature Range: -55 to +175 鈩? (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) 鈩? (13)Mounting torque, 6-32 or M3 srew: 10 lbf路in (1.1N路m).
Features
FZ1200R16KF4 Features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175鈩?Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Lead-Free.
Diagrams
<P><IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201262601547383.jpg"></P>
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 FZ1200R16KF4 |
Infineon Technologies |
IGBT Modules 1600V 1200A SINGLE |
Data Sheet |
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FZ1200R16KF4S1 |
Infineon Technologies |
IGBT Modules 1600V 1200A SINGLE |
Data Sheet |
Negotiable |
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